Investigation of the resistive switching phenomenon in Nb2O5 point-contact devices

Nyomtatóbarát változatNyomtatóbarát változat
Típus: 
MSc diplomamunka téma - nanotechnológia és anyagtudomány
Félév: 
2017/18/2.
Témavezető: 
Név: 
Halbritter András
Email cím: 
halbritt@mail.bme.hu
Intézet/Tanszék/Cégnév: 
BME Fizika Tanszék
Beosztás: 
egyetemi tanár, tanszékvezető
Hallgató: 
Név: 
Török Tímea Nóra
Képzés: 
Fizikus MSc - nanotechnológia és anyagtudomány
Elvárások: 

Advanced experimental skills, decent knowledge of solid state physics.

Leírás: 

Transition metal-oxide compounds are commonly used as the active medium in resistive switching memory devices (ReRAMs). In these material systems the resistive switching is attributed to the field-induced motion of oxygen vacancies: in the oxygen deficient regions conducting filaments can be formed, whereas the oxygen rich areas are insulating. The microscopic details of the switching mechanism, however are sill not fully clarified. Recently our research group started to investigate a less well-know ReRAM material, Nb2O5. Along the diploma thesis work the applicant will prepare Nb2O5 based resistive switching devices in various geometries, and study their conduction and switching properties.