Transition metal-oxide compounds are commonly used as the active medium in resistive switching memory devices (ReRAMs). In these material systems the resistive switching is attributed to the field-induced motion of oxygen vacancies: in the oxygen deficient regions conducting filaments can be formed, whereas the oxygen rich areas are insulating. The microscopic details of the switching mechanism, however are sill not fully clarified. Recently our research group started to investigate a less well-know ReRAM material, Nb2O5. Along the diploma thesis work the applicant will prepare Nb2O5 based resistive switching devices in various geometries, and study their conduction and switching properties.