New Broadband Microwave Technique Advances Semiconductor Characterization
2026. February 05.
Researchers from Semilab Inc., Budapest University of Technology and Economics (BME), and the University of Notre Dame have developed a new contactless, time-resolved microwave photoconductivity platform that significantly extends the capabilities of a key semiconductor characterization technique. While conventional photoconductivity measurements typically operate at a single microwave frequency and excitation wavelength, the new system combines a broadband coplanar-waveguide sensor with flexible readout electronics, enabling wide-frequency detection, temperature-dependent measurements, and multiphoton excitation. This allows a much more comprehensive view of carrier dynamics than previously possible. The platform is directly relevant to industrial silicon wafer metrology, while also supporting research on emerging materials such as perovskites, wide-band-gap power semiconductors, and topological and quantum materials. The work highlights the strength of close industry–university collaboration, uniting industrial metrology expertise with academic research to advance both semiconductor technology and fundamental materials science. Availability of the paper: https://journals.aps.org/prapplied/abstract/10.1103/pdrr-tpcm and https://arxiv.org/pdf/2411.16892
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