Volatile Mott memristors are key components of neuromorphic circuits alongside conventional non-volatile resistive switches. While the latter essentially play the role of artificial synapses in neural network applications, the former act as artificial neurons implementing several neural spiking patterns. In addition, Mott memristors are well applied to oscillating neural networks, where information processing occurs in the dynamic domain and the computation is encoded by the phase of the oscillators. All these applications require fast operation, but until today, only oscillation frequencies in the 10 MHz regime have been reported with the most common, VO₂-based Mott memristors.

Relying on our initial results that beat the above frequency limit by an order of magnitude, the applicant will work on the optimization of ultra-fast memristive circuits, focusing on the following topics: (i) Development of an ultra-fast measurement system, including the programming of a GHz bandwidth FPGA-based arbitrary waveform generator and the development of a high frequency probestation setup. (ii) Development of fine-tunable high-frequency memristive oscillator circuits using trimmer capacitors. (iii) Coupling of multiple oscillator circuits or multiple types of memristive devices in the high-frequency domain. (iv) Investigation of the ultrafast switching dynamics in different memristive systems using time-resolved resistive switching experiments.